共 16 条
[3]
OPTICAL-CONSTANTS OF VARIOUS HEAVILY DOPED PARA-TYPE SILICON-CRYSTALS AND NORMAL-TYPE SILICON-CRYSTALS OBTAINED BY KRAMERS-KRONIG ANALYSIS
[J].
INFRARED PHYSICS,
1977, 17 (05)
:319-329
[4]
DETERMINATION OF EFFECTIVE MASS VALUES BY A KRAMERS-KRONIG ANALYSIS FOR VARIOUSLY DOPED SILICON-CRYSTALS
[J].
INFRARED PHYSICS,
1977, 17 (02)
:111-119
[5]
ON THE OPTICALLY DETERMINED RELAXATION-TIME OF HEAVILY DOPED P-TYPE SILICON
[J].
PHYSICA STATUS SOLIDI B-BASIC RESEARCH,
1982, 109 (02)
:K85-K88
[6]
BORN M, 1964, PRINCIPLE OPTICS, P50
[8]
ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF IMPLANTATION DOPED SILICON BY INFRARED REFLECTION
[J].
RADIATION EFFECTS AND DEFECTS IN SOLIDS,
1982, 60 (1-4)
:35-47
[9]
RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1962, 41 (02)
:387-+
[10]
FREE CARRIER REFLECTIVITY IN OPTICALLY HOMOGENEOUS SILICON
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1972, 11 (02)
:461-&