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ON THE OPTICALLY DETERMINED RELAXATION-TIME OF HEAVILY DOPED P-TYPE SILICON

被引：2
作者：
BARTA, E
机构：
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1982年 / 109卷 / 02期
关键词：
D O I：
10.1002/pssb.2221090243
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：K85 / K88
页数：4
相关论文
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