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- [2] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
- [3] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY [J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
- [5] CARRIER LIFETIMES IN AMORPHOUS-SILICON JUNCTIONS FROM DELAYED AND INTERRUPTED FIELD EXPERIMENTS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (05): : L49 - L54
- [6] MAJORITY AND MINORITY-CARRIER LIFETIMES IN DOPED A-SI JUNCTIONS AND THE ENERGY OF THE DANGLING-BOND STATE [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (03): : L33 - L40
- [7] THE THICKNESS DEPENDENCE OF EXCESS CARRIER LIFETIME AND MOBILITY IN AMORPHOUS-SILICON JUNCTIONS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (05): : L83 - L88
- [8] DISORDER EFFECTS ON DEEP TRAPPING IN AMORPHOUS-SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (01): : L15 - L20