MECHANISM OF CARRIER LIFETIME INCREASE IN ION-BEAM SYNTHESIZED SOI-STRUCTURES

被引：2

作者：

SKORUPA, W ^{[1
]}

OERTEL, H ^{[1
]}

机构：

[1] INST SOLID STATE PHYS & ELECTRON MICROSCOPY,DDR-4010 HALLE,GER DEM REP

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 20期

关键词：

ION BEAMS - Synthesis - SEMICONDUCTOR MATERIALS - Charge Carriers;

D O I：

10.1049/el:19860728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Carrier lifetime were measured in epitaxial silicon layers which were deposited on silicon wafers implanted with different nitrogen doses at 330 kev. At doses greater than 10**1**6 cm** minus **2 the lifetime was more than one order of magnitude higher on the implanted part of the wafers (approximately 300 mu s). The mechanism responsible for this effect is connected with the gettering efficiency for heavy metals of a precipitation-rich dislocation network in the implanted silicon.

引用

页码：1062 / 1064

页数：3

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