INCREASED CARRIER LIFETIMES IN EPITAXIAL SILICON LAYERS ON BURIED SILICON-NITRIDE PRODUCED BY ION-IMPLANTATION

被引：10

作者：

SKORUPA, W ^{[1
]}

KREISSIG, U ^{[1
]}

HENSEL, E ^{[1
]}

BARTSCH, H ^{[1
]}

机构：

[1] INST SOLID STATE PHYS & ELECTRON MICROSCOPY,DDR-401 HALLE,GER DEM REP

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 10期

关键词：

D O I：

10.1049/el:19840295

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：426 / 427

页数：2

共 10 条

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[3]

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[8] ELECTRICAL-PROPERTIES OF SILICON-IMPLANTED FURNACE-ANNEALED SILICON-ON-SAPPHIRE DEVICES [J].

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[9] INTERPRETATION OF SURFACE AND BULK EFFECTS USING PULSED MIS CAPACITOR [J].

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[10] MICROSECOND CARRIER LIFETIMES IN SI FILMS PREPARED ON SIO2-COATED SI SUBSTRATES BY ZONE-MELTING RECRYSTALLIZATION AND BY SUBSEQUENT EPITAXIAL-GROWTH [J].

TSAUR, BY ;

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GEIS, MW .

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