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THE FORMATION OF BURIED SI3N4 LAYERS IN SILICON BY HIGH-DOSE NITROGEN ION-IMPLANTATION

被引：14
作者：
KREISSIG, U
SKORUPA, W
HENSEL, E
机构：
来源：
THIN SOLID FILMS | 1983年 / 100卷 / 03期
关键词：
D O I：
10.1016/0040-6090(83)90284-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：L25 / L28
页数：4
相关论文
共 8 条
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  • [6] PREPARATION, CHARACTERIZATION AND APPLICATIONS OF SILICON-NITRIDE THIN-FILMS
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    [J]. THIN SOLID FILMS, 1980, 65 (02) : 171 - 208
  • [7] FORMATION OF SILICON-NITRIDE COMPOUND LAYERS BY HIGH-DOSE NITROGEN IMPLANTATION
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    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1605 - 1610
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