PREPARATION, CHARACTERIZATION AND APPLICATIONS OF SILICON-NITRIDE THIN-FILMS

被引：164

作者：

MOROSANU, CE

机构：

来源：

THIN SOLID FILMS | 1980年 / 65卷 / 02期

关键词：

D O I：

10.1016/0040-6090(80)90254-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：171 / 208

页数：38

共 294 条

[1] ETCHING CHARACTERISTICS OF SILICON AND ITS COMPOUNDS BY GAS PLASMA [J].

ABE, H ;

SONOBE, Y ;

ENOMOTO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (01) :154-155

[2] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS OBTAINED BY REACTION OF SIBR4 AND NH3 [J].

ABOAF, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) :1736-&

[3]

APPELS JA, 1970, PHILIPS RES REP, V25, P118

[4]

APPELS JA, 1971, PHILIPS RES REP, V26, P157

[5] DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY [J].

ARCHER, RJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1962, 52 (09) :970-&

[6] THERMODYNAMICAL ANALYSES AND EXPERIMENTS FOR PREPARATION OF SILICON NITRIDE [J].

ARIZUMI, T ;

NISHINAGA, T ;

OGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1968, 7 (09) :1021-+

[7]

ARMIROTTO AL, 1968, SOLID STATE TECHNOL, V11, P43

[8] TECHNIQUE FOR FABRICATING OXIDE PASSIVATED BARITT DIODES [J].

ARMSTRONG, BM ;

MOORE, RA ;

GAMBLE, HS ;

WAKEFIELD, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) :1462-1463

[9] HOLE INJECTION INTO SILICON-NITRIDE - DARK CURRENT DEPENDENCE ON ELECTRODE MATERIALS AND INSULATOR THICKNESS [J].

ARNETT, PC ;

DIMARIA, DJ .

APPLIED PHYSICS LETTERS, 1975, 27 (01) :34-36

[10] SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].

ARNETT, PC ;

YUN, BH .

APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96

← 1 2 3 4 5 6 7 8 9 10 →