CORRELATION OF PULSED MOS CAPACITOR MEASUREMENTS WITH OXIDATION INDUCED DEFECTS

被引：9

作者：

UNTER, TF ^{[1
]}

ROBERTS, PCT ^{[1
]}

LAMB, DR ^{[1
]}

机构：

[1] UNIV SOUTHAMPTON,DEPT ELECTR,SOUTHAMPTON SO9 5NH,HAMPSHIRE,ENGLAND

来源：

ELECTRONICS LETTERS | 1977年 / 13卷 / 04期

关键词：

D O I：

10.1049/el:19770065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：93 / 94

页数：2

共 8 条

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REESE, M .

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[2] OXIDATION-INDUCED STACKING-FAULTS IN SILICON .1. NUCLEATION PHENOMENON [J].

RAVI, KV ;

VARKER, CJ .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :263-271

[3] DISLOCATION ETCH FOR (100) PLANES IN SILICON [J].

SECCODARAGONA, F .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (07) :948-+

[4] EVALUATION OF DARK-CURRENT NONUNIFORMITY IN A CHARGE-COUPLED DEVICE [J].

TANIKAWA, K ;

ITO, Y ;

SEI, H .

APPLIED PHYSICS LETTERS, 1976, 28 (05) :285-287

[5]

VIEWEGGUTBERLET FG, 1973, SEMICONDUCTOR SILICO, P119

[6] TRANSIENT EMISSION AND GENERATION CURRENTS IN METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J].

WEI, LS ;

SIMMONS, JG .

SOLID-STATE ELECTRONICS, 1975, 18 (10) :853-857

[7] MINORITY-CARRIER GENERATION STUDIES IN MOS CAPACITORS ON N-TYPE SILICON [J].

YOUNG, DR ;

OSBURN, CM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1578-1581

[8]

ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30

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