TRANSIENT EMISSION AND GENERATION CURRENTS IN METAL-INSULATOR-SEMICONDUCTOR CAPACITORS

被引：10

作者：

WEI, LS

SIMMONS, JG

机构：

[1] ATOM ENERGY CANADA,OTTAWA,ONTARIO,CANADA

[2] UNIV TORONTO,ELECT ENGN DEPT,TORONTO,ONTARIO,CANADA

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 10期

关键词：

D O I：

10.1016/0038-1101(75)90007-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：853 / 857

页数：5

共 9 条

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[5] THEORY OF TRANSIENT EMISSION CURRENT IN MOS DEVICES AND DIRECT DETERMINATION INTERFACE TRAP PARAMETERS [J].

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[6]

SIMMONS JH, TO BE PUBLISHED

[7]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P432

[8] EFFECT OF TEMPERATURE AND VOLTAGE SWEEP RATE ON C-V CHARACTERISTICS OF MIS CAPACITORS [J].

WEI, LS ;

SIMMONS, JG .

SOLID-STATE ELECTRONICS, 1974, 17 (10) :1021-1028

[9]

ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30

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