PIEZORESISTIVE EFFECT OF BORON-DOPED DIAMOND THIN-FILMS

被引：50

作者：

DORSCH, O ^{[1
]}

HOLZNER, K ^{[1
]}

WERNER, M ^{[1
]}

OBERMEIER, E ^{[1
]}

HARPER, RE ^{[1
]}

JOHNSTON, C ^{[1
]}

CHALKER, PR ^{[1
]}

BUCKLEYGOLDER, IM ^{[1
]}

机构：

[1] AEA TECHNOL,HARWELL LAB B552,DEPT SURF SCI & TECHNOL,DIDCOT OX11 0RA,OXON,ENGLAND

来源：

关键词：

D O I：

10.1016/0925-9635(93)90279-B

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Double-layer structures consisting of a nominally undoped diamond film and an overlying boron-doped diamond film on Si substrates were used for investigations into the piezoresistive effect of polycrystalline diamond films. Various resistor structures were fabricated by conventional photolithography and by reactive ion etching in an oxygen plasma. The resistor structures were pasted onto a defined deflectable bending beam to permit measurement of the longitudinal and transverse piezoresistive effects. The longitudinal piezoresistive effect is greater than the transverse effect. An increase in the gauge factor was observed with decreasing dopant concentration. The maximum longitudinal gauge factor at room temperature is 5.4. An increase in the gauge factor from 5.4 to 13.7 was measured in the course of a temperature increase from 27 to 60-degrees-C.

引用

页码：1096 / 1099

页数：4

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