DESIGN AND PERFORMANCE OF MONOLITHIC GAAS DIRECT-COUPLED PREAMPLIFIERS AND MAIN AMPLIFIERS

被引：8

作者：

IMAI, Y

KATO, N

OHWADA, K

SUGETA, T

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1985年 / 33卷 / 08期

关键词：

D O I：

10.1109/TMTT.1985.1133054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：686 / 692

页数：7

共 10 条

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[2]

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[3] ULTRABROADBAND GAAS MONOLITHIC AMPLIFIER [J].

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[5] ULTRA-BROAD-BAND GAAS MONOLITHIC DIRECT-COUPLED FEEDBACK-AMPLIFIERS [J].

IMAI, Y ;

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[7]

PAUKER V, 1983, IEEE MICROWAVE MILLI, P71

[8] A MESFET VARIABLE-CAPACITANCE MODEL FOR GAAS INTEGRATED-CIRCUIT SIMULATION [J].

TAKADA, T ;

YOKOYAMA, K ;

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SUDO, T .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (05) :719-724

[9]

TAKADA T, 1983, TG SSD124 IECE PAP T, P9

[10] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS [J].

YAMASAKI, K ;

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