MODELING OF CARRIER MOBILITY AGAINST CARRIER CONCENTRATION IN ARSENIC-DOPED, PHOSPHORUS-DOPED, AND BORON-DOPED SILICON

被引：768

作者：

MASETTI, G ^{[1
]}

SEVERI, M ^{[1
]}

SOLMI, S ^{[1
]}

机构：

[1] IST LAMEL,CNR,I-40126 BOLOGNA,ITALY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 07期

关键词：

D O I：

10.1109/T-ED.1983.21207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：764 / 769

页数：6

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