A HIGHLY LATCHUP-IMMUNE L-MU-M CMOS TECHNOLOGY FABRICATED WITH L-MEV ION-IMPLANTATION AND SELF-ALIGNED TISI2

被引：25

作者：

LAI, FSJ ^{[1
]}

WANG, LK ^{[1
]}

TAUR, Y ^{[1
]}

SUN, JYC ^{[1
]}

PETRILLO, KE ^{[1
]}

CHICOTKA, SK ^{[1
]}

PETRILLO, EJ ^{[1
]}

POLCARI, MR ^{[1
]}

BUCELOT, TJ ^{[1
]}

ZICHERMAN, DS ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 09期

关键词：

D O I：

10.1109/T-ED.1986.22664

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1308 / 1320

页数：13

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