DEEP HIGH-DOSE ERBIUM IMPLANTATION OF LOW-LOSS SILICON OXYNITRIDE WAVE-GUIDES

被引：6

作者：

CHELNOKOV, AV

LOURTIOZ, JM

BOUCAUD, P

BERNAS, H

CHAUMONT, J

PLOWMAN, T

机构：

[1] UNIV PARIS 11,CTR SPECTROSCOPIE NUCL & SPECTROMETRIE MASSE,F-91405 ORSAY,FRANCE

[2] DUKE UNIV,DEPT BIOMED ENGN,DURHAM,NC 27706

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 22期

关键词：

OPTICAL WAVE-GUIDES; ION IMPLANTATION; PHOTOLUMINESCENCE;

D O I：

10.1049/el:19941294

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence studies of low-loss SiON waveguides deeply (2.8MeV) implanted with erbium at concentrations up to 1atm.% are reported. Rapid thermal annealing at 900 degrees C is found to repair most of the implantation damage and results in a 5.3ms I-4(13/2) lifetime for 0.25atm.% Er concentration. Measurements in 1atm.% doped samples show significant erbium ion-ion interactions.

引用

页码：1850 / 1852

页数：3

共 4 条

[1] LOW-ENERGY ERBIUM IMPLANTED SI3N4/SIO2/SI WAVE-GUIDES [J].