CLOSE-SPACED VAPOR TRANSPORT COMBINED WITH FREE EVAPORATION FOR DOPING OF SEMICONDUCTOR THIN-FILMS

被引:20
作者
CASTRORODRIGUEZ, R
PENA, JL
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 03期
关键词
D O I
10.1116/1.578801
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:730 / 731
页数:2
相关论文
共 7 条
[1]   ELECTRICAL-PROPERTIES OF CDTE-FILMS AND JUNCTIONS [J].
ANTHONY, TC ;
FAHRENBRUCH, AL ;
PETERS, MG ;
BUBE, RH .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :400-410
[2]   MODEL-CALCULATIONS FOR ACCELERATED AS ION DOPING OF SI DURING MOLECULAR-BEAM EPITAXY [J].
BAJOR, G ;
GREENE, JE .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1579-1582
[3]   RELATIVE CARRIER DENSITIES AND TRAP EFFECTS ON THE PROPERTIES OF CDS/CDTE [J].
FORTMANN, CM ;
FAHRENBRUCH, AL ;
BUBE, RH .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :2038-2045
[4]   GREG - A NEW HOTWALL-CLOSE-SPACED VAPOR TRANSPORT DEPOSITION SYSTEM [J].
MENEZES, C ;
FORTMANN, C ;
CASEY, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :709-711
[5]  
Menezes C., 1982, Fourth E.C. Photovoltaic Solar Energy Conference. Proceedings of the International Conference, P836
[6]  
SOSA V, 1989, J VAC SCI TECHNOL A, V8, P979
[7]  
SUZUKI T, 1988, JPN J APPL PHYS, V26, P1626