CRITICAL-CURRENT DEPENDENCE ON LINE-WIDTH AND LONG-TERM STABILITY OF EPITAXIAL YBA2CU3O7-X THIN-FILM LINES

被引:7
作者
HAHN, T
FOTHERINGHAM, G
KLOCKAU, J
机构
[1] Technische Universitat Berlin, Technologien der Mikroperipherik
关键词
D O I
10.1109/77.402836
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated the line width dependence of the critical current density of epitaxial, ion beam etched YBCO lines of 1... 20 mu m width and 10 mu m... 10 cm length. The long term stability of superconducting parameters was studied over it period of several months. YBCO films with J(c)>1*10(7) A/cm(2) at 77 K can be fabricated using a variety of existing technologies. An increase of the critical current density of up to 40 % has been observed if the line width decreases from w = 20 mu m to w = 1 mu m which corresponds to the width dependence of the current density distribution as is shown by FEM simulations. The J(c) increase of narrower lines can be compromised by the degradation of the conductor edges. Based on values of the penetration depth obtained from phase velocity measurements, the simulation was used to extract values of the intrinsic critical current density and of the width of the degraded zone by fitting the J(c)(w) curves. Our measurements suggest the increase of the effective penetration depth of degraded lines. At present lines of width >= 5 mu m can be fabricated which maintain at 77 K critical currents of about 5*10(6) A/cm(2). over tens of centimeters line length. Degradation of the superconducting properties occurs during storage, It is accompanied by the disappearance of the J(c) increase of narrower lines, Degradation is pronounced at narrow and long lines which points to defect and edge related oxygen outdiffusion.
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页码:1440 / 1443
页数:4
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