PREPARATION OF A-SI-H FILMS RESISTIVE TO THE STAEBLER-WRONSKI EFFECT

被引：5

作者：

YAMAZAKI, M ^{[1
]}

OHAGI, H ^{[1
]}

NAKATA, J ^{[1
]}

IMAO, S ^{[1
]}

SHIRAFUJI, J ^{[1
]}

FUJIBAYASHI, K ^{[1
]}

INUISHI, Y ^{[1
]}

机构：

[1] OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA 565, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 09期

关键词：

D O I：

10.1143/JJAP.27.L1739

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1739 / L1741

页数：3

共 11 条

[1] CARLSON DE, 1984, PHYSICS HYDROGENATED, P214
[2] CHENEVASPAULE A, 1984, SEMICONDUCT SEMIMET, V21, pCH12
[3] EFFECT OF SUBSTRATE-TEMPERATURE ON THE NUCLEATION OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON
COLLINS, RW
CAVESE, JM
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1207 - 1209
[4] PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON PREPARED BY CHEMICAL VAPOR-DEPOSITION
ELLIS, FB
GORDON, RG
PAUL, W
YACOBI, BG
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (12) : 4309 - 4317
[5] LIGHT-INDUCED DEGRADATION AND THERMAL RECOVERY OF THE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON FILMS
ESER, E
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) : 3508 - 3515
[6] OPTICAL DEGRADATION OF A-SI-H FILMS WITH DIFFERENT MORPHOLOGY
OHAGI, H
YAMAZAKI, M
NAKATA, J
IMAO, S
SHIRAFUJI, J
FUJIBAYASHI, K
INUISHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (05): : L916 - L918
[7] OHAGI H, 1987, 1987 PVSEC 3 TOK, P671
[8] EFFECT OF SUBSTRATE-TEMPERATURE ON PROPERTIES OF GLOW-DISCHARGED HYDROGENATED AMORPHOUS-SILICON
SHIRAFUJI, J
KUWAGAKI, M
SATO, T
INUISHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (10): : 1278 - 1286
[9] EFFECTS OF HYDROGEN DILUTION OF SILANE ON PROPERTIES OF GLOW-DISCHARGED UNDOPED HYDROGENATED SILICON
SHIRAFUJI, J
NAGATA, S
KUWAGAKI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (03): : 336 - 344
[10] REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI
STAEBLER, DL
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 292 - 294

← 1 2 →