PHOTOELECTROCHEMICAL CHARACTERIZATION OF CDSNP2 CRYSTALS

[1] EFFICIENT P-INP(RH-H ALLOY) AND P-INP(RE-H ALLOY) HYDROGEN EVOLVING PHOTO-CATHODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2865 - 2866

[2] CDP2-SN SYSTEM AND SOME PROPERTIES OF CDSNP2 CRYSTALS [J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (05) : 303 - &

[3] CONCERNING GROWTH OF SINGLE CRYSTALS OF II-IV-V DIAMOND-LIKE COMPOUNDS ZNSIP2, CDSIP2, ZNGEP2, AND CDSNP2 AND STANDARD ENTHALPIES OF FORMATION FOR ZNSIP2 AND CDSIP2 [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 8 (04) : 324 - &

[4] CAHEN D, UNPUB PROG CRYSTAL G

[5] MOTT-SCHOTTKY PLOTS AND FLAT-BAND POTENTIALS FOR SINGLE-CRYSTAL RUTILE ELECTRODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 1973 - 1977

[6] FOLMER JCW, 1983, J ELECTROCHEM SOC, V130, pC442

[7] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87

[8] N-TYPE GAAS PHOTO-ANODES IN ACETONITRILE - DESIGN OF A 10.0-PERCENT EFFICIENT PHOTO-ELECTRODE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 115 - 117

[9] MOSSBAUER STUDY OF TIN PHOSPHIDES [J]. JOURNAL OF SOLID STATE CHEMISTRY, 1975, 13 (03) : 204 - 207

[10] 11.5-PERCENT SOLAR CONVERSION EFFICIENCY IN THE PHOTOCATHODICALLY PROTECTED P-INP-V3+-V2+-HCL-C SEMICONDUCTOR LIQUID JUNCTION CELL [J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 282 - 284

[1] EFFICIENT P-INP(RH-H ALLOY) AND P-INP(RE-H ALLOY) HYDROGEN EVOLVING PHOTO-CATHODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2865 - 2866

[2] CDP2-SN SYSTEM AND SOME PROPERTIES OF CDSNP2 CRYSTALS [J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (05) : 303 - &

[3] CONCERNING GROWTH OF SINGLE CRYSTALS OF II-IV-V DIAMOND-LIKE COMPOUNDS ZNSIP2, CDSIP2, ZNGEP2, AND CDSNP2 AND STANDARD ENTHALPIES OF FORMATION FOR ZNSIP2 AND CDSIP2 [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 8 (04) : 324 - &

[4] CAHEN D, UNPUB PROG CRYSTAL G

[5] MOTT-SCHOTTKY PLOTS AND FLAT-BAND POTENTIALS FOR SINGLE-CRYSTAL RUTILE ELECTRODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 1973 - 1977

[6] FOLMER JCW, 1983, J ELECTROCHEM SOC, V130, pC442

[7] DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1959, 116 (01): : 84 - 87

[8] N-TYPE GAAS PHOTO-ANODES IN ACETONITRILE - DESIGN OF A 10.0-PERCENT EFFICIENT PHOTO-ELECTRODE [J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 115 - 117

[9] MOSSBAUER STUDY OF TIN PHOSPHIDES [J]. JOURNAL OF SOLID STATE CHEMISTRY, 1975, 13 (03) : 204 - 207

[10] 11.5-PERCENT SOLAR CONVERSION EFFICIENCY IN THE PHOTOCATHODICALLY PROTECTED P-INP-V3+-V2+-HCL-C SEMICONDUCTOR LIQUID JUNCTION CELL [J]. APPLIED PHYSICS LETTERS, 1981, 38 (04) : 282 - 284