EFFECT OF WATER-CONTENT OF B2O3 ENCAPSULANT ON SEMI-INSULATING LEC GAAS CRYSTAL

被引：12

作者：

EMORI, H

KIKUTA, T

INADA, T

OBOKATA, T

FUKUDA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 05期

关键词：

D O I：

10.1143/JJAP.24.L291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L291 / L293

页数：3

共 9 条

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[3]

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[4]

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[8] HIGH-PURITY LEC GROWTH AND DIRECT IMPLANTATION OF GAAS FOR MONOLITHIC MICROWAVE CIRCUITS [J].

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TA, LB ;

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[9] LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS [J].

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