STABILITY OF RUO2 THIN-FILM RESISTORS

被引：13

作者：

JIAO, KL

JIA, QX

ANDERSON, WA

机构：

[1] Department of Electrical and Computer Engineering, State University of New York at Buffalo, Amherst, NY 14260

来源：

THIN SOLID FILMS | 1993年 / 227卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90187-T

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

RuO2 thin film resistors were deposited by reactive sputtering at room temperature on SiO2/Si or ceramic substrates. The temperature coefficient of resistance (TCR) was adjusted to near zero using a post-deposition annealing process. High stability in TCR was proven under tests of long-term thermal storage, high humidity and power aging. Patterned samples were made from a lift-off process and resistors in a two orders range of resistance exhibited a uniform property. Using current-voltage-temperature (I-V-T) measurements, different conduction mechanisms were found for samples with positive, near zero and negative TCRs.

引用

页码：59 / 65

页数：7

共 12 条

[1]

[Anonymous], 1990, METALS HDB, V2

[2] 1/F NOISE IN RU-BASED THICK-FILM RESISTORS [J].