BARRIER WIDTH DEPENDENCE OF LEAKAGE CURRENTS IN INGAAS/GAAS MULTIPLE QUANTUM-WELL P-I-N-DIODES

被引：7

作者：

DAVID, JPR

GREY, R

PATE, MA

CLAXTON, PA

WOODHEAD, J

机构：

[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, Mappin Street

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1991年 / 20卷 / 04期

关键词：

III-V SEMICONDUCTORS; STRAINED LAYER SEMICONDUCTORS; DIODE LEAKAGE CURRENTS;

D O I：

10.1007/BF02657893

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A range of InGaAs/GaAs strained layer multiple quantum well pin diode structures with different barrier dimensions has been grown and characterized. High quality low leakage structures (< 2 x 10(-4) A/cm2 @ 0.9 V(BD) with a high degree of strain (approximately 2%) have been produced. An important factor affecting the leakage for a fixed well composition and dimension is found to be the barrier width.

引用

页码：295 / 297

页数：3

共 8 条

[1] IMPACT IONIZATION COEFFICIENTS IN IN0.2GA0.8AS/GAAS STRAINED-LAYER SUPERLATTICES [J].

BULMAN, GE ;

ZIPPERIAN, TE ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :212-214

[2] PHOTOLUMINESCENCE IN STRAINED INGAAS/GAAS SUPERLATTICES [J].

DAHL, DA ;

DRIES, LJ ;

JUNGA, FA ;

OPYD, WG ;

CHU, P .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :2079-2082

[3] PERFORMANCE-CHARACTERISTICS OF INGAAS/GAAS AND GAAS/INGAALAS COHERENTLY STRAINED SUPERLATTICE PHOTODIODES [J].

DAS, U ;

ZEBDA, Y ;

BHATTACHARYA, P ;

CHIN, A .

APPLIED PHYSICS LETTERS, 1987, 51 (15) :1164-1166

[4] PERFORMANCE OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

SMITH, RG ;

KIM, OK .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (12) :2040-2048

[5]

GERSHONI D, 1988, APPL PHYS LETT, V53, P1924

[6] RELAXATION OF STRAIN WITHIN MULTILAYER INGAAS/GAAS PSEUDOMORPHIC STRUCTURES [J].

GREY, R ;

DAVID, JPR ;

CLAXTON, PA ;

SANZ, FG ;

WOODHEAD, J .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) :975-977

[7] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125

[8] ON THE BAND-GAP OF INGAAS/GAAS STRAINED QUANTUM WELLS [J].

WOODHEAD, J ;

SANZ, FG ;

CLAXTON, PA ;

DAVID, JPR .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) :601-604

← 1 →