TEM/HREM VISUALIZATION OF NM-SCALE COHERENT INAS ISLANDS (QUANTUM DOTS) IN A GAAS MATRIX

被引：34

作者：

RUVIMOV, S

SCHEERSCHMIDT, K

机构：

[1] Max-Planck-Institut Für Mikrostrukturphysik, Halle

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1995年 / 150卷 / 01期

关键词：

D O I：

10.1002/pssa.2211500141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electron microscope determination (high resolution HREM and conventional diffraction contrast TEM) of the structure (geometry, size, shape, etc.) of nm-scale objects is of great interest for the creation of novel semiconducting materials of reduced dimensions as, e.g., quantum dots (QDs) and quantum wires. HREM contrast simulations based on molecular dynamics structure modelling are applied to check the visualization of coherently strained nm-scale InAs islands embedded in a GaAs matrix. Being of pyramidal shape, InAs islands always seem to be truncated owing to lower In content on top of the pyramid and to the high level of strains around the island. Optimum imaging conditions are analysed to reveal shape and size of such objects.

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页码：471 / 478

页数：8

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