THE GROWTH BY MOCVD OF LOW-DOPED P-TYPE GAAS USING A DIMETHYLZINC ADDUCT

被引：10

作者：

WRIGHT, PJ ^{[1
]}

COCKAYNE, B ^{[1
]}

JONES, AC ^{[1
]}

ORRELL, ED ^{[1
]}

机构：

[1] EPICHEM LTD,WIRRAL L62 3QF,MERSEYSIDE,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 91卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(88)90367-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：63 / 66

页数：4

共 11 条

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[8] THE GROWTH OF MAGNESIUM-DOPED GAAS BY THE OM-VPE PROCESS [J].

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[10] FACTORS INFLUENCING DOPING CONTROL AND ABRUPT METALLURGICAL TRANSITIONS DURING ATMOSPHERIC-PRESSURE MOVPE GROWTH OF ALGAAS AND GAAS [J].

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