DIFFUSION AND CODIFFUSION OF BORON AND ARSENIC IN MONOCRYSTALLINE SILICON DURING RAPID THERMAL ANNEALINGS

被引：10

作者：

GONTRAND, C ^{[1
]}

ANCEY, P ^{[1
]}

HADDAB, H ^{[1
]}

CHAUSSEMY, G ^{[1
]}

机构：

[1] UNIV LYON 1,ISIDT,F-69622 VILLEURBANNE,FRANCE

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 02期

关键词：

D O I：

10.1088/0268-1242/7/2/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The diffusion and codiffusion of boron and arsenic in monocrystalline silicon during rapid thermal annealing (RTA) have been investigated. Samples were characterized by secondary-ion mass spectroscopy (SIMS). Experimental results give depth profiles and are used to adjust the parameters of our process simulation programs.

引用

页码：181 / 187

页数：7

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