PLASMA-ASSISTED EPITAXIAL-GROWTH OF GASB IN HYDROGEN PLASMA

[1] S-DOPING OF MBE-GASB WITH H2S GAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : L893 - L896

[2] HABEGGER MA, 1965, PHYS REV, V138, P598

[3] PLASMA-ASSISTED DEPOSITION AND EPITAXY OF GAAS FILMS [J]. THIN SOLID FILMS, 1981, 80 (1-3) : 235 - 239

[4] HARIU T, 1982, I PHYS C SER, V65, P141

[5] LUMINESCENCE AND PHOTOCONDUCTIVITY OF UNDOPED P-GASB [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01): : 169 - +

[6] EPITAXIAL VAPOR GROWTH OF GALLIUM ANTIMONIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1039 - +

[7] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

[8] MANASEVIT HM, 1979, J ELECTROCHEM SOC, V126, P2031, DOI 10.1149/1.2128849

[9] HEAVILY TE-DOPED GAAS-LAYERS BY PLASMA-ASSISTED EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (09): : L602 - L604

[10] UNDOPED N-TYPE GASB GROWN BY LIQUID-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) : 203 - 204

[1] S-DOPING OF MBE-GASB WITH H2S GAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : L893 - L896

[2] HABEGGER MA, 1965, PHYS REV, V138, P598

[3] PLASMA-ASSISTED DEPOSITION AND EPITAXY OF GAAS FILMS [J]. THIN SOLID FILMS, 1981, 80 (1-3) : 235 - 239

[4] HARIU T, 1982, I PHYS C SER, V65, P141

[5] LUMINESCENCE AND PHOTOCONDUCTIVITY OF UNDOPED P-GASB [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01): : 169 - +

[6] EPITAXIAL VAPOR GROWTH OF GALLIUM ANTIMONIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (09) : 1039 - +

[7] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

[8] MANASEVIT HM, 1979, J ELECTROCHEM SOC, V126, P2031, DOI 10.1149/1.2128849

[9] HEAVILY TE-DOPED GAAS-LAYERS BY PLASMA-ASSISTED EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (09): : L602 - L604

[10] UNDOPED N-TYPE GASB GROWN BY LIQUID-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (01) : 203 - 204