CONSTRUCTION OF AMORPHOUS-SILICON ISFET

被引：27

作者：

GOTOH, M

ODA, S

SHIMIZU, I

SEKI, A

TAMIYA, E

KARUBE, I

机构：

[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN

[2] TOKYO INST TECHNOL,RESOURCES UTILIZAT RES LAB,MIDORI KU,TOKYO 152,JAPAN

来源：

SENSORS AND ACTUATORS | 1989年 / 16卷 / 1-2期

关键词：

D O I：

10.1016/0250-6874(89)80005-8

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

收藏

页码：55 / 65

页数：11

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