CONSTRUCTION OF AMORPHOUS-SILICON ISFET

被引:27
作者
GOTOH, M
ODA, S
SHIMIZU, I
SEKI, A
TAMIYA, E
KARUBE, I
机构
[1] TOKYO INST TECHNOL,IMAGING SCI & ENGN LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
[2] TOKYO INST TECHNOL,RESOURCES UTILIZAT RES LAB,MIDORI KU,TOKYO 152,JAPAN
来源
SENSORS AND ACTUATORS | 1989年 / 16卷 / 1-2期
关键词
D O I
10.1016/0250-6874(89)80005-8
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
引用
收藏
页码:55 / 65
页数:11
相关论文
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