TECHNIQUE FOR MONITORING SLOW INTERFACE-TRAP CHARACTERISTICS IN MOS CAPACITORS

被引：16

作者：

TANNER, P

DIMITRIJEV, S

HARRISON, HB

机构：

[1] School of Microelectronic Engineering, Griffith University, Nathan

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 21期

关键词：

MOS CAPACITORS; SEMICONDUCTOR INSULATOR BOUNDARIES;

D O I：

10.1049/el:19951258

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new experimental technique presented in the Letter simultaneously extracts the trap response time as well as trap density and energy in the silicon bandgap. The technique is illustrated by measuring the trap density increase in a MOS capacitor due to constant current stressing and is compared with the results obtained using the conventional quasistatic C/V technique.

引用

页码：1880 / 1881

页数：2

共 7 条

[1] THE SILICON SILICON-DIOXIDE SYSTEM - ITS MICROSTRUCTURE AND IMPERFECTIONS [J].