BULK SILICIDES AND SI-METAL INTERFACE REACTION - PD2SI

[31] LEY L, 1978, TOPICS APPLIED PHYSI, V27

[32] PHOTON POLARIZATION EFFECTS IN ANGLE-INTEGRATED PHOTOEMISSION SPECTROSCOPY - SIMPLE EXPERIMENTAL GEOMETRY [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (07): : 662 - 664

[33] PHOTOABSORPTION CROSS-SECTION OF TITANIUM TO COBALT [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (03) : 577 - &

[34] OELHAFEN P, 1979, SOLID STATE COMMUN, V30, P641, DOI 10.1016/0038-1098(79)90113-3

[35] A LEED-AES STUDY OF THIN PD FILMS ON SI(111) AND (100) SUBSTRATES [J]. SURFACE SCIENCE, 1980, 97 (01) : 88 - 100

[36] SURFACE-STRUCTURE OF EPITAXIAL PD2SI THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 138 - 140

[37] THERMALLY INDUCED ACCUMULATION OF SILICON ON PALLADIUM SILICIDE SURFACES AS STUDIED BY AUGER-ELECTRON SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 705 - 706

[38] PARTIAL DENSITIES OF STATES IN AMORPHOUS PD0.81SI0.19 [J]. PHYSICAL REVIEW B, 1979, 20 (02) : 776 - 783

[39] NATURE OF THE VALENCE STATES IN SILICON TRANSITION-METAL INTERFACES [J]. SOLID STATE COMMUNICATIONS, 1981, 39 (02) : 195 - 198

[40] CHEMICAL BONDING AND REACTIONS AT THE PD-SI INTERFACE [J]. PHYSICAL REVIEW B, 1981, 23 (08) : 4183 - 4196

[31] LEY L, 1978, TOPICS APPLIED PHYSI, V27

[32] PHOTON POLARIZATION EFFECTS IN ANGLE-INTEGRATED PHOTOEMISSION SPECTROSCOPY - SIMPLE EXPERIMENTAL GEOMETRY [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (07): : 662 - 664

[33] PHOTOABSORPTION CROSS-SECTION OF TITANIUM TO COBALT [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (03) : 577 - &

[34] OELHAFEN P, 1979, SOLID STATE COMMUN, V30, P641, DOI 10.1016/0038-1098(79)90113-3

[35] A LEED-AES STUDY OF THIN PD FILMS ON SI(111) AND (100) SUBSTRATES [J]. SURFACE SCIENCE, 1980, 97 (01) : 88 - 100

[36] SURFACE-STRUCTURE OF EPITAXIAL PD2SI THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 138 - 140

[37] THERMALLY INDUCED ACCUMULATION OF SILICON ON PALLADIUM SILICIDE SURFACES AS STUDIED BY AUGER-ELECTRON SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1979, 35 (09) : 705 - 706

[38] PARTIAL DENSITIES OF STATES IN AMORPHOUS PD0.81SI0.19 [J]. PHYSICAL REVIEW B, 1979, 20 (02) : 776 - 783

[39] NATURE OF THE VALENCE STATES IN SILICON TRANSITION-METAL INTERFACES [J]. SOLID STATE COMMUNICATIONS, 1981, 39 (02) : 195 - 198

[40] CHEMICAL BONDING AND REACTIONS AT THE PD-SI INTERFACE [J]. PHYSICAL REVIEW B, 1981, 23 (08) : 4183 - 4196