共 14 条
- [1] Antcliffe GA, 1971, P INT C PHYS SEMIMET, P499
- [2] BOUAT J, 1977, THESIS PARIS
- [3] CATAGNUS PC, 1976, Patent No. 3977018
- [4] ANODIC OXIDE COMPOSITION AND HG DEPLETION AT THE OXIDE-SEMICONDUCTOR INTERFACE OF HG1-XCDXTE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 472 - 476
- [5] DUFOUR JP, 1981, 1981 P INFOS ERL, P289
- [6] KURODA T, 1976, J PHYS SOC JAPAN, V21, P709
- [7] Narita S., 1979, Physics of Semiconductors 1978, P1235
- [8] FAR-IR CYCLOTRON-RESONANCE IN INVERSION LAYER ON PARA-HG1-XCDXTE [J]. NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1977, 39 (02): : 834 - 839