IN0.53GA0.47 AS JUNCTION FIELD-EFFECT TRANSISTORS AS TUNABLE FEEDBACK RESISTORS FOR INTEGRATED RECEIVER PREAMPLIFIERS

被引：11

作者：

BROWN, JJ

LO, DCW

GARDNER, JT

CHUNG, YK

LEE, CD

FORREST, SR

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 12期

关键词：

D O I：

10.1109/55.43149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：588 / 590

页数：3

共 10 条

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FORREST, SR ;

LONG, J ;

CHENG, CL ;

GUTH, G ;

WUNDER, R ;

RIGGS, VG .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) :384-386

[2] IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING [J].

FORREST, SR ;

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA .

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[3]

LO DCW, 1989, IEEE J LIGHTWAVE TEC, V7, P966

[4]

LO DCW, 1989, IEEE J LIGHTWAVE TEC, V7, P957

[5] A MONOLITHICALLY INTEGRATED INGAAS/INP PHOTORECEIVER OPERATING WITH A SINGLE 5-V POWER-SUPPLY [J].

MATSUDA, K ;

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OHNAKA, K ;

SHIBATA, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (08) :1284-1288

[6]

RANAUD JC, 1988, IEEE J LIGHTWAVE TEC, V6, P1507

[7]

Smith R. G., 1980, SEMICONDUCTOR DEVICE

[8]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[9] MONOLITHIC INTEGRATION OF A PLANAR EMBEDDED INGAAS P-I-N DETECTOR WITH INP DEPLETION-MODE FETS [J].

TELL, B ;

LIAO, ASH ;

BROWNGOEBELER, KF ;

BRIDGES, TJ ;

BURKHARDT, G ;

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BERGANO, NS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2319-2321

[10]

WILLIAMS GF, 1986, J LIGHTWAVE TECHNOL, V4, P1502

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