ANALYSIS OF CAPACITANCE AND TRANSCONDUCTANCE FREQUENCY DISPERSIONS IN MESFETS FOR SURFACE CHARACTERIZATION

[1] TRANSCONDUCTANCE COMPRESSION IN SUBMICROMETER GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 341 - 343

[2] EVIDENCE OF DETRIMENTAL SURFACE EFFECTS ON GAAS POWER MESFETS [J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1094 - 1095

[3] DUMAS JM, 1985, ELECTRON LETT, V21, P116

[4] GRAFFEUIL J, 1977, THESIS U P SABATIER

[5] ELECTRICAL MODELING OF COMPOUND SEMICONDUCTOR INTERFACE FOR FET DEVICE ASSESSMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1055 - 1061

[6] Hasegawa H., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P145

[7] ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES [J]. THIN SOLID FILMS, 1983, 103 (1-2) : 119 - 140

[8] LANGLADE P, 1984, I PHYSICS C, V74

[9] EFFECT OF SURFACE-STATES ON CHARACTERISTICS OF MIS FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (10) : 1199 - &

[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

[1] TRANSCONDUCTANCE COMPRESSION IN SUBMICROMETER GAAS-MESFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 341 - 343

[2] EVIDENCE OF DETRIMENTAL SURFACE EFFECTS ON GAAS POWER MESFETS [J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1094 - 1095

[3] DUMAS JM, 1985, ELECTRON LETT, V21, P116

[4] GRAFFEUIL J, 1977, THESIS U P SABATIER

[5] ELECTRICAL MODELING OF COMPOUND SEMICONDUCTOR INTERFACE FOR FET DEVICE ASSESSMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1055 - 1061

[6] Hasegawa H., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P145

[7] ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES [J]. THIN SOLID FILMS, 1983, 103 (1-2) : 119 - 140

[8] LANGLADE P, 1984, I PHYSICS C, V74

[9] EFFECT OF SURFACE-STATES ON CHARACTERISTICS OF MIS FIELD-EFFECT TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (10) : 1199 - &

[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +