MERCURY-SENSITIZED HYDROGEN RADICAL PHOTOETCHING OF UNDOPED HYDROGENATED AMORPHOUS-SILICON AND CRYSTALLINE SILICON

被引：12

作者：

NOZAKI, H

SAKUMA, N

ITO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.L1708

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1708 / L1711

页数：4

共 13 条

[1]

ALBRIGHT DE, 1989, IN PRESS 1989 P MAT

[2]

BRUNAUER S, 1945, ADSORPTION GASES VAP, V1, pCH4

[3] FLASH SPECTROSCOPY WITH MERCURY RESONANCE RADIATION .2. ROLE OF HGH IN HG(63P1) SENSITIZED REACTIONS [J].

CALLEAR, AB ;

HEDGES, REM .

TRANSACTIONS OF THE FARADAY SOCIETY, 1970, 66 (567) :615-&

[4] FLASH SPECTROSCOPY WITH MERCURY RESONANCE RADIATION .1. AN EXPERIMENTAL METHOD WITH MICROWAVE-PULSE EXCITATION [J].

CALLEAR, AB ;

HEDGES, REM .

TRANSACTIONS OF THE FARADAY SOCIETY, 1970, 66 (567) :605-&

[5]

CHAUNG TJ, 1983, SURF SCI REP, V3, P1

[6] RIE CONTAMINATION OF ETCHED SILICON SURFACES [J].

EPHRATH, LM ;

BENNETT, RS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1822-1826

[7] LASER-ENHANCED PLASMA-ETCHING OF SILICON [J].

HOLBER, W ;

REKSTEN, G ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :201-203

[8] PLASMALESS DRY ETCHING OF SILICON WITH FLUORINE-CONTAINING COMPOUNDS [J].

IBBOTSON, DE ;

MUCHA, JA ;

FLAMM, DL ;

COOK, JM .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2939-2942

[9] 3P1 MERCURY-PHOTOSENSITIZED DECOMPOSITION OF MONOSILANE [J].

NIKI, H ;

MAINS, GJ .

JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (02) :304-&

[10] EFFECT OF H-2 PLASMA-ETCHING DURING GLOW-DISCHARGE DEPOSITION OF AMORPHOUS-CARBON FILMS [J].

NISHIKAWA, S ;

KAKINUMA, H ;

FUKUDA, H ;

WATANABE, T ;

NIHEI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (04) :511-514

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