LASER-ENHANCED PLASMA-ETCHING OF SILICON

被引：22

作者：

HOLBER, W

REKSTEN, G

OSGOOD, RM

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 02期

关键词：

D O I：

10.1063/1.95684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：201 / 203

页数：3

共 15 条

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EHRLICH, DJ ;

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DEUTSCH, TF .

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[7]

EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718

[8] BASIC CHEMISTRY AND MECHANISMS OF PLASMA-ETCHING [J].

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DONNELLY, VM ;

IBBOTSON, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (01) :23-30

[9] NON-THERMAL EFFECTS IN LASER-ENHANCED ETCHING OF SILICON BY XEF2 [J].

HOULE, FA .

CHEMICAL PHYSICS LETTERS, 1983, 95 (01) :5-8

[10] PHOTOEFFECTS ON THE FLUORINATION OF SILICON .1. INFLUENCE OF DOPING ON STEADY-STATE PHENOMENA [J].

HOULE, FA .

JOURNAL OF CHEMICAL PHYSICS, 1983, 79 (09) :4237-4246

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