STRUCTURE AND GROWTH-MECHANISM OF ULTRATHIN FILMS OF BI CUPRATES GROWN BY LOW-TEMPERATURE MBE

被引:6
作者
KAWAI, M
HANADA, T
KUDO, M
ISHIZAWA, N
GODA, T
TERATANI, S
机构
[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
[2] TOKYO GAKUGEI UNIV,DEPT CHEM,KOGANEI,TOKYO 184,JAPAN
来源
PHYSICA C | 1991年 / 190卷 / 1-2期
关键词
D O I
10.1016/S0921-4534(05)80188-1
中图分类号
O59 [应用物理学];
学科分类号
摘要
The structure and growth mechanism of a Bi cuprate formed by low-temperature MBE are discussed. Examination of the X-ray diffraction of the ultrathin films revealed that the lattice constants of an ultrathin film of Bi 2201 are affected by the lattice Constants of the substrate. The key process of the low-temperature epitaxial growth realized by the usage of NO2 is also discussed in correlation with the oxidation mechanism of deposited metals with NO2 examined by X-ray photoelectron spectroscopy.
引用
收藏
页码:27 / 30
页数:4
相关论文
共 6 条
[1]   ULTRATHIN FILM OF BI2SR2CUOX FORMED BY MOLECULAR-BEAM EPITAXY USING NO2 [J].
KAWAI, M ;
WATANABE, S ;
HANADA, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (06) :4104-4105
[2]   MOLECULAR-BEAM EPITAXY OF BI2SR2CUOX AND BI2SR2CA0.85SR0.15CU2OX ULTRA THIN-FILMS AT 300-DEGREES-C [J].
KAWAI, M ;
WATANABE, S ;
HANADA, T .
JOURNAL OF CRYSTAL GROWTH, 1991, 112 (04) :745-752
[3]  
KAWAI M, 1991, IN PRESS P MATER SOC
[4]   CRYSTAL SUBSTRUCTURE AND PHYSICAL-PROPERTIES OF THE SUPERCONDUCTING PHASE BI4(SR,CA)6CU4O16+X [J].
TARASCON, JM ;
LEPAGE, Y ;
BARBOUX, P ;
BAGLEY, BG ;
GREENE, LH ;
MCKINNON, WR ;
HULL, GW ;
GIROUD, M ;
HWANG, DM .
PHYSICAL REVIEW B, 1988, 37 (16) :9382-9389
[5]   CLEANING THE SURFACE OF SRTIO3(100) AND LAALO3(100) UNDER MODERATE TEMPERATURE CONDITION BY BI ADSORPTION DESORPTION TREATMENT [J].
WATANABE, S ;
HIKITA, T ;
KAWAI, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (04) :2394-2396
[6]   MOLECULAR-BEAM EPITAXY STUDY OF BI2SR2CUOX USING NO2 AS AN OXIDIZING-AGENT [J].
WATANABE, S ;
KAWAI, M ;
HANADA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (07) :L1111-L1113