OHMIC CONTACTS AND TRANSPORT-PROPERTIES IN ZNSE-BASED HETEROSTRUCTURES

被引：26

作者：

HAN, J ^{[1
]}

FAN, Y ^{[1
]}

RINGLE, MD ^{[1
]}

HE, L ^{[1
]}

GRILLO, DC ^{[1
]}

GUNSHOR, RL ^{[1
]}

HUA, GC ^{[1
]}

OTSUKA, N ^{[1
]}

机构：

[1] PURDUE UNIV, SCH MAT ENGN, W LAFAYETTE, IN 47907 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 138卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(94)90851-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper both horizontal and vertical transport properties of ZnSe based heterostructures were studied. Temperature-dependent Hall effect measurements were performed on nitrogen-doped ZnSe, ZnTe, Zn(S,Se) and (Zn,Mg)(S,Se) epilayers; accepter concentration N(a), compensation donor concentration N(d) and the activation energy E(a) were derived by curve-fitting to the freeze-out behavior of the hole concentrations. Vertical transport study, through the use of an analytical computer simulation, suggested that the electron transport across the n-ZnSe/n-GaAs heterointerface is often hindered by the presence of a high density of interface states; both the employment of heavy doping near the interface and the modification of GaAs surface stoichiometry before the nucleation of ZnSe were found effective in reducing the device impedance.

引用

页码：464 / 470

页数：7

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