ON THE INJECTION LEVEL DEPENDENCE OF THE MINORITY-CARRIER LIFETIME IN DEFECTED SILICON SUBSTRATES

被引：3

作者：

DEPAUW, P ^{[1
]}

MERTENS, R ^{[1
]}

VANOVERSTRAETEN, R ^{[1
]}

JAIN, SC ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,DELHI 110007,INDIA

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 06期

关键词：

D O I：

10.1016/0038-1101(84)90189-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：573 / &

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