GROWTH-MECHANISM IN ATOMIC LAYER EPITAXY .1. RE-EVAPORATION OF CD AND TE FROM CDTE(111) SURFACES MONITORED BY AUGER-ELECTRON SPECTROSCOPY

被引：19

作者：

HERMAN, MA ^{[1
]}

JYLHA, O ^{[1
]}

PESSA, M ^{[1
]}

机构：

[1] TAMPERE UNIV TECHNOL,INST PHYS,SF-33101 TAMPERE 10,FINLAND

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1986年 / 21卷 / 07期

关键词：

D O I：

10.1002/crat.2170210707

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：841 / 851

页数：11

相关论文

共 22 条

[1] CASSUTO A, 1983, 9 P INT VAC C 5 INT, P179
[2] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES
CHO, AY
[J]. THIN SOLID FILMS, 1983, 100 (04) : 291 - 317
[3] SURFACE ANALYSIS AND ANGULAR-DISTRIBUTIONS IN X-RAY PHOTOELECTRON-SPECTROSCOPY
FADLEY, CS
BAIRD, RJ
SIEKHAUS, W
NOVAKOV, T
BERGSTROM, SA
[J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1974, 4 (02) : 93 - 137
[4] PHYSICAL PROBLEMS CONCERNING EFFUSION PROCESSES OF SEMICONDUCTORS IN MOLECULAR-BEAM EPITAXY
HERMAN, MA
[J]. VACUUM, 1982, 32 (09) : 555 - 565
[5] ATOMIC LAYER EPITAXY OF CD1-XMNXTE GROWN ON CDTE (111)B SUBSTRATES
HERMAN, MA
JYLHA, O
PESSA, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (02) : 480 - 483
[6] KUBASCHEWSKI O, 1967, METALLURGICAL TERMOC, P418
[7] ON THE USE OF THE AUGER TECHNIQUE FOR QUANTITATIVE-ANALYSIS OF OVERLAYERS
MEMEO, R
CICCACCI, F
MARIANI, C
OSSICINI, S
[J]. THIN SOLID FILMS, 1983, 109 (02) : 159 - 167
[8] MOLECULAR LAYER EPITAXY
NISHIZAWA, J
ABE, H
KURABAYASHI, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200
[9] NISHIZAWA JI, 1984, INT C SOLID STATE DE
[10] ATOMIC LAYER EPITAXY AND CHARACTERIZATION OF CDTE-FILMS GROWN ON CDTE (110) SUBSTRATES
PESSA, M
HUTTUNEN, P
HERMAN, MA
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) : 6047 - 6050