FLICKER NOISE IN MOSFETS WITH GATE-VOLTAGE-DEPENDENT MOBILITY

被引:4
作者
DUH, KH
VANDERZIEL, A
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D O I
10.1016/0038-1101(84)90153-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:459 / 461
页数:3
相关论文
共 3 条
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[2]   DISCRIMINATION BETWEEN 2 NOISE MODELS IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].
PARK, HS ;
VANDERZIEL, A ;
ZIJLSTRA, RJJ ;
LIU, ST .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :296-299
[3]   THE EFFECT OF GATE-VOLTAGE-DEPENDENT MOBILITY ON THERMAL NOISE IN MOSFETS [J].
VANDERZIEL, A ;
BOSMAN, G .
SOLID-STATE ELECTRONICS, 1982, 25 (06) :525-527