PROCESS INVESTIGATIONS OF TOTAL-DOSE HARD, TYPE-108 OP AMPS

被引：7

作者：

PALKUTI, LJ

SIVO, LL

GREEGOR, RB

机构：

[1] USN RES LAB,WASHINGTON,DC 20375

[2] BOEING CO,SEATTLE,WA 98124

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1976年 / 23卷 / 06期

关键词：

D O I：

10.1109/TNS.1976.4328574

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1756 / 1761

页数：6

共 11 条

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PALKUTI L, 1968, GOVERNMENT MICROCIRC, V1, P202

[8] INFLUENCE OF SURFACE CONDITIONS ON SILICON PLANAR TRANSISTOR CURRENT GAIN [J].

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SAH C, 1976, HDLCR761641 HDL REP

[10] EFFECTS OF ELECTRON-IRRADIATION ON OPERATIONAL AMPLIFIERS [J].

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