PERSISTENT PHOTOCONDUCTIVITY IN QUANTUM WELL RESONATORS

被引：14

作者：

SOLLNER, TCLG

LE, HQ

CORREA, CA

GOODHUE, WD

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 01期

关键词：

D O I：

10.1063/1.96394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：36 / 38

页数：3

共 10 条

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[2] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS [J].

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[3]

LANG DV, 1979, I PHYS C SER, V43, P433

[4] PERSISTENT PHOTO-CONDUCTANCE AND PHOTOQUENCHING OF SELECTIVELY DOPED AL0.3GA0.7AS GAAS HETEROJUNCTIONS [J].

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JACKSON, TN ;

KIRCHNER, PD ;

MENDEZ, EE ;

PETTIT, GD ;

WOODALL, JM .

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[5] LONG-LIFETIME PHOTOCONDUCTIVITY EFFECT IN N-TYPE GAAIAS [J].

NELSON, RJ .

APPLIED PHYSICS LETTERS, 1977, 31 (05) :351-353

[6] RESONANT TUNNELING THROUGH QUANTUM WELLS AT FREQUENCIES UP TO 2.5 THZ [J].

SOLLNER, TCLG ;

GOODHUE, WD ;

TANNENWALD, PE ;

PARKER, CD ;

PECK, DD .

APPLIED PHYSICS LETTERS, 1983, 43 (06) :588-590

[7] QUANTUM WELL OSCILLATORS [J].

SOLLNER, TCLG ;

TANNENWALD, PE ;

PECK, DD ;

GOODHUE, WD .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1319-1321

[8]

STORMER HL, 1981, APPL PHYS LETT, V39, P912, DOI 10.1063/1.92604

[9]

TATSUTA S, 1984, NOV FALL M MAT RES S

[10] TUNNELING IN A FINITE SUPERLATTICE [J].

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ESAKI, L .

APPLIED PHYSICS LETTERS, 1973, 22 (11) :562-564

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