EHT CLUSTER CALCULATIONS OF DEEP-LEVEL DEFECTS IN SI WITHOUT DANGLING BONDS

被引：11

作者：

SFERCO, SJ

PASSEGGI, MCG

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 19期

关键词：

D O I：

10.1088/0022-3719/18/19/010

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：3717 / 3727

页数：11

共 49 条

[1] COUNTERINTUITIVE ORBITAL MIXING IN SEMI-EMPIRICAL AND ABINITIO MOLECULAR-ORBITAL CALCULATIONS [J].

AMMETER, JH ;

BURGI, HB ;

THIBEAULT, JC ;

HOFFMANN, R .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1978, 100 (12) :3686-3692

[2] DEFECTS IN DIAMOND - THE UNRELAXED VACANCY AND SUBSTITUTIONAL NITROGEN [J].

BACHELET, GB ;

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1981, 24 (08) :4736-4744

[3] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :892-895

[4] CALCULATION OF SI AND AL INTERSTITIALS IN SILICON USING THE CLUSTER-EXTENDED GREENS-FUNCTION TECHNIQUE [J].

BARAFF, GA ;

SCHLUTER, M ;

ALLAN, G .

PHYSICA B & C, 1983, 116 (1-3) :76-78

[5]

BARAFF GA, 1979, FESTKORPERPROBLEME, V19, P303

[6] SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].

BERNHOLC, J ;

LIPARI, NO ;

PANTELIDES, ST .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899

[7]

Bourgoin J., 1983, SPRINGER SERIES SOLI, V35

[8] DEEP-LEVEL NITROGEN CENTERS IN LASER-ANNEALED ION-IMPLANTED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1982, 26 (11) :6040-6052

[9] JAHN-TELLER-DISTORTED NITROGEN DONOR IN LASER-ANNEALED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1627-1629

[10] AB INITIO COMPUTATIONS IN ATOMS AND MOLECULES [J].

CLEMENTI, E .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (01) :2-&

← 1 2 3 4 5 →