MOVPE GROWTH OF P-TYPE ZNSE USING DIMETHYLAMINOLITHIUM AS THE DOPANT

被引：11

作者：

YANASHIMA, K

KOYANAGI, K

HARA, K

YOSHINO, J

KUKIMOTO, H

机构：

[1] Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 124卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90526-O

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

p-Type ZnSe layers with carrier concentrations ranging from high 10(14) cm-3 to mid 10(16) cm-3 have been grown at 470 and 600-degrees-C metalorganic vapor phase epitaxy (MOVPE) using dimethylzinc and dimethylselenide as the sources and dimethylaminolithium as the dopant. Light-emitting diodes consisting of p-ZnSe/n-ZnSe/n-GaAs have been fabricated based on the growth of p-type ZnSe layers. A typical diode has shown blue emission at room and low temperatures.

引用

页码：616 / 619

页数：4

共 7 条

[1] OPTICAL-PROPERTIES OF UNDOPED ORGANO-METALLIC GROWN ZNSE AND ZNS [J].