STUDY OF SUBMICRON SRTIO3 PATTERNING

被引：7

作者：

AOKI, H ^{[1
]}

HASHIMOTO, T ^{[1
]}

IKAWA, E ^{[1
]}

KIKKAWA, T ^{[1
]}

TAKEUCHI, K ^{[1
]}

YAMAMICHI, S ^{[1
]}

SAKUMA, T ^{[1
]}

MIYASAKA, Y ^{[1
]}

机构：

[1] NEC CORP LTD,FUNDAMENTAL RES LABS,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 1B期

关键词：

HIGH DIELECTRIC CONSTANT MATERIAL; DRY ETCHING; DRAM; CAPACITOR;

D O I：

10.1143/JJAP.32.376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Features of thin strontium titanate (SrTiO3) films are a high dielectric constant (epsilon(r)) and chemical and structural stability. Submicron SrTiO3 patterning is necessary for realizing future planar dynamic random access memory (DRAM) structures to suppress parasitic capacitance. The etching technology and reaction with SrTiO3 film were investigated. It was found that the SrTiO3 film Could be chemically etched by Cl2 and SF6 mixture gas, and 0.6 mum SrTiO3 patterns were etched by Cl2 with 10%-SF6 gases. In addition, the side wall deposition layer was removed by rinsing with CH3COOH, HNO3 and HF mixture solution.

引用

页码：376 / 379

页数：4

共 8 条

[1]

BONDURANT D, 1989, IEEE SPECTRUM, V30

[2] GROWTH AND PROPERTIES OF PBTIO3 THIN-FILMS BY PHOTOENHANCED CHEMICAL VAPOR-DEPOSITION [J].

KATAYAMA, T ;

FUJIMOTO, M ;

SHIMIZU, M ;

SHIOSAKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9B) :2189-2192

[3]

KOYAMA K, 1991, P IEDM, P823

[4]

POOR MR, 1990, MATER RES SOC SYMP P, V200, P211, DOI 10.1557/PROC-200-211

[5] BARRIER LAYERS FOR REALIZATION OF HIGH CAPACITANCE DENSITY IN SRTIO3 THIN-FILM CAPACITOR ON SILICON [J].

SAKUMA, T ;

YAMAMICHI, S ;

MATSUBARA, S ;

YAMAGUCHI, H ;

MIYASAKA, Y .

APPLIED PHYSICS LETTERS, 1990, 57 (23) :2431-2433

[6] SWITCHING KINETICS OF LEAD ZIRCONATE TITANATE SUB-MICRON THIN-FILM MEMORIES [J].

SCOTT, JF ;

KAMMERDINER, L ;

PARRIS, M ;

TRAYNOR, S ;

OTTENBACHER, V ;

SHAWABKEH, A ;

OLIVER, WF .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) :787-792

[7] SRTIO3 THIN-FILM PREPARATION BY ION-BEAM SPUTTERING AND ITS DIELECTRIC-PROPERTIES [J].

YAMAMICHI, S ;

SAKUMA, T ;

TAKEMURA, K ;

MIYASAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9B) :2193-2196

[8]

IEEE CIRCUITS DEVICE

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