ELECTRICAL-PROPERTIES OF RF-SPUTTERED IN-ZNTE SCHOTTKY DIODES

Sputter deposition has become a widely used technique for fabrication of metal-semiconductor junction devices. In the present paper, the electrical properties of radio frequency (RF) sputtered In-ZnTe Schottky diodes have been measured over the temperature range 100-300 K. The transport properties of the junction were investigated by measuring the temperature dependence of the dark current-voltage characteristics. The capacitance and conductance measurements on the junctions showed an appreciable frequency dependence, indicating the presence of deep traps and interface states. The observed rapid increase of conductance with temperature was attributed to the presence of surface states which possibly acted as generation recombination centres. Three hole trap levels at energies of 0.3, 0.38 and 0.55 eV were detected by deep level transient spectroscopy (DLTS), in the temperature range 100-300 K. These levels are likely to be present in the compound semiconductors owing to the increased tendency towards formation of native defects and/or impurity complexes.