EFFECT OF DC BIAS LEVEL ON SPECTRUM OF GAAS LASERS OPERATED WITH SHORT PULSES

[1] Adams M. J., 1973, Opto-Electronics, V5, P201, DOI 10.1007/BF01414739

[2] DROZHBIN YA, 1967, JETP LETT-USSR, V5, P143

[3] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 3126 - 3131

[4] LARGE-SIGNAL PCM BEHAVIOR OF INJECTION LASERS WITH COHERENT IRRADIATION INTO ONE OF THEIR OSCILLATING MODES [J]. ELECTRONICS LETTERS, 1975, 11 (16) : 372 - 374

[5] IKEGAMI T, 1970, ELECTRON COMMUN JPN, V53, P82

[6] IKEGAMI T, 1974, JOINT M IEEE JAPAN, V4, P180

[7] IKEGAMI T, 1975, IEE132 C PUBL, P111

[8] KOBAYASHI K, 1975, IEE132 C PUBL, P138

[9] DIRECT MODULATION OF SEMICONDUCTOR LASERS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (10): : 1457 - +

[10] SPIKES IN LIGHT OUTPUT OF ROOM-TEMPERATURE GAAS JUNCTION LASERS [J]. APPLIED PHYSICS LETTERS, 1967, 11 (11) : 346 - &

[1] Adams M. J., 1973, Opto-Electronics, V5, P201, DOI 10.1007/BF01414739

[2] DROZHBIN YA, 1967, JETP LETT-USSR, V5, P143

[3] THRESHOLD TEMPERATURE CHARACTERISTICS OF DOUBLE HETEROSTRUCTURE GA1-XALXAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 3126 - 3131

[4] LARGE-SIGNAL PCM BEHAVIOR OF INJECTION LASERS WITH COHERENT IRRADIATION INTO ONE OF THEIR OSCILLATING MODES [J]. ELECTRONICS LETTERS, 1975, 11 (16) : 372 - 374

[5] IKEGAMI T, 1970, ELECTRON COMMUN JPN, V53, P82

[6] IKEGAMI T, 1974, JOINT M IEEE JAPAN, V4, P180

[7] IKEGAMI T, 1975, IEE132 C PUBL, P111

[8] KOBAYASHI K, 1975, IEE132 C PUBL, P138

[9] DIRECT MODULATION OF SEMICONDUCTOR LASERS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (10): : 1457 - +

[10] SPIKES IN LIGHT OUTPUT OF ROOM-TEMPERATURE GAAS JUNCTION LASERS [J]. APPLIED PHYSICS LETTERS, 1967, 11 (11) : 346 - &