DEGRADATION PHENOMENOLOGY IN (AL)GAAS QUANTUM WELL LASERS

被引：22

作者：

WATERS, RG

BERTASKA, RK

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 03期

关键词：

D O I：

10.1063/1.99512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：179 / 181

页数：3

共 12 条

[1] FACET-COATED GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE SINGLE-QUANTUM-WELL LASERS HAVING LOW DEGRADATION RATES ()1-PERCENT/KH) AT 70-DEGREES-C [J].

DUPUIS, RD ;

HARTMAN, RL ;

NASH, FR .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) :286-288

[2] RELIABILITY OF (ALGA)AS CW LASER-DIODES [J].

ETTENBERG, M ;

KRESSEL, H .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :186-196

[3] STATISTICAL STUDY OF THE RELIABILITY OF OXIDE-DEFINED STRIPE CW LASERS OF (ALGA)AS [J].

ETTENBERG, M .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1195-1202

[4] CONTINUOUSLY OPERATED (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS WITH 70-DEGREES-C LIFETIMES AS LONG AS 2 YEARS [J].

HARTMAN, RL ;

SCHUMAKER, NE ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :756-759

[5]

HILL DS, 1987, FEB TOP M SEM LAS AL

[6] GRADUAL DEGRADATION OF GAAS DOUBLE-HETEROSTRUCTURE LASERS [J].

NEWMAN, DH ;

RITCHIE, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :300-305

[7] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS [J].

PETROFF, P ;

HARTMAN, RL .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :469-471

[8]

PETROFF PM, 1985, SEMICONDUCT SEMIMET, V22, P379

[9] CAVITY LENGTH DEPENDENCE OF THE THRESHOLD BEHAVIOR IN THIN QUANTUM-WELL SEMICONDUCTOR-LASERS [J].

REISINGER, AR ;

ZORY, PS ;

WATERS, RG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :993-999

[10] RELIABILITY OF A PRACTICAL GA1-XALXAS LASER DEVICE [J].

THOMPSON, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (01) :11-13

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