MOS MODELING HIERARCHY INCLUDING RADIATION EFFECTS

被引：2

作者：

ALEXANDER, DR ^{[1
]}

TURFLER, RM ^{[1
]}

机构：

[1] BDM CORP, 2600 YALE BLVD SE, ALBUQUERQUE, NM 87106 USA

来源：

关键词：

D O I：

10.1109/TNS.1975.4328177

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2611 / 2616

页数：6

共 14 条

[1] BURGHARD RA, 1973, IEEE T NUCLEAR S DEC, P300
[2] PHYSICAL LIMITATIONS OF MOS STRUCTURES
DAS, MB
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (05) : 305 - +
[3] GREGORY BL, 1973, IEEE T NUCLEAR S DEC
[4] DESIGN THEORY OF A SURFACE FIELD-EFFECT TRANSISTOR
IHANTOLA, HKJ
MOLL, JL
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (06) : 423 - 430
[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[6] KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164
[7] LONG DM, 1967, IEEE T NUCLEAR 1204, P210
[8] ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN
MERCKEL, G
BOREL, J
CUPCEA, NZ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 681 - +
[9] CARRIER MOBILITY IN SILICON MOSTS
MURPHY, NSJ
BERZ, F
FLINN, I
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (10) : 775 - +
[10] POCOCK DN, 1972, AFWLTR71183