CRYOGENIC TEMPERATURE PERFORMANCE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：2

作者：

KOLODZEY, J ^{[1
]}

LASKAR, J ^{[1
]}

BOOR, S ^{[1
]}

REIS, S ^{[1
]}

KETTERSON, A ^{[1
]}

ADESIDA, I ^{[1
]}

SIVCO, D ^{[1
]}

FISCHER, R ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 12期

关键词：

D O I：

10.1049/el:19890525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：777 / 779

页数：3

共 9 条

[1]

ADESIDA I, IN PRESS MICROELECTR

[2]

ADESIDA I, 1988, 14TH INT C MICR ENG

[3] ENHANCEMENT OF ELECTRON VELOCITY IN MODULATION-DOPED (AL, GA)AS GAAS-FETS AT CRYOGENIC TEMPERATURES [J].

DRUMMOND, TJ ;

SU, SL ;

LYONS, WG ;

FISCHER, R ;

KOPP, W ;

MORKOC, H ;

LEE, K ;

SHUR, MS .

ELECTRONICS LETTERS, 1982, 18 (24) :1057-1058

[4] MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS [J].

DRUMMOND, TJ ;

MASSELINK, WT ;

MORKOC, H .

PROCEEDINGS OF THE IEEE, 1986, 74 (06) :773-822

[5] FREQUENCY-RESPONSE OF ALINAS/GAINAS/INP MODULATION-DOPED FIELD-EFFECT TRANSISTORS AT CRYOGENIC TEMPERATURES [J].

KOLODZEV, J ;

ADESIDA, I ;

LASKAR, J ;

BOOR, S ;

REIS, S ;

KETTERSON, A ;

CHO, AY ;

FISCHER, R ;

SIVCO, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) :2442-2442

[6]

Kolodzey J., 1987, Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.87CH2526-2), P53

[7]

KOLODZEY J, 1988, 46TH DEV RES C BOULD

[8] 0.1-MU-M GATE LENGTH MODFETS WITH UNITY CURRENT GAIN CUTOFF FREQUENCY ABOVE 110 GHZ [J].

LEPORE, AN ;

LEVY, HM ;

TIBERIO, RC ;

TASKER, PJ ;

LEE, H ;

WOLF, ED ;

EASTMAN, LF ;

KOHN, E .

ELECTRONICS LETTERS, 1988, 24 (06) :364-366

[9] ULTRA-HIGH-SPEED DIGITAL CIRCUIT PERFORMANCE IN 0.2-MU-M GATE-LENGTH ALINAS/GAINAS HEMT TECHNOLOGY [J].

MISHRA, UK ;

JENSEN, JF ;

BROWN, AS ;

THOMPSON, MA ;

JELLOIAN, LM ;

BEAUBIEN, RS .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) :482-484

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