0.1-MU-M GATE LENGTH MODFETS WITH UNITY CURRENT GAIN CUTOFF FREQUENCY ABOVE 110 GHZ

被引：27

作者：

LEPORE, AN

LEVY, HM

TIBERIO, RC

TASKER, PJ

LEE, H

WOLF, ED

EASTMAN, LF

KOHN, E

机构：

[1] CORNELL UNIV,SCH ELECT ENGN,NATL NANOFABRICAT FACIL,KNIGHT LAB,ITHACA,NY 14853

[2] SIEMENS RES & TECHNOL LABS,PRINCETON,NJ 08540

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 06期

关键词：

D O I：

10.1049/el:19880247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：364 / 366

页数：3

共 7 条

[1]

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[6]

KOHN E, 1987, 14TH INT S GAAS REL

[7] MICROWAVE PERFORMANCE OF 0.25-MU-M GATE LENGTH HIGH ELECTRON-MOBILITY TRANSISTORS [J].

MISHRA, UK ;

PALMATEER, SC ;

CHAO, PC ;

SMITH, PM ;

HWANG, JCM .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) :142-145

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